| PART |
Description |
Maker |
| 1N4448 |
500 mW EPITAXIAL PLANAR DIODES
|
First Components International
|
| MA2C196 MA196 |
Small-signal device - Diodes - Swicthing Diodes
Switching Diodes
DO-34-A1
From old datasheet system
Silicon epitaxial planar type
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| 1N4151 |
500 mW EPITAXIAL PLANAR DIODES
|
First Components Intern...
|
| MA26V09 |
Silicon epitaxial planar type
Small-signal device - Diodes - variable Capacitance Diodes
|
Panasonic Corporation
|
| MA26V02 |
Small-signal device - Diodes - variable Capacitance Diodes
Silicon epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| BZX85C51 BZX85C56 BZX85C5V1 BZX85C5V6 BZX85C75 BZX |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Small signal Schotky diodes
From old datasheet system
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
TFUNK[Vishay Telefunken]
|
| MA26V03 |
Silicon epitaxial planar type
Small-signal device - Diodes - variable Capacitance Diodes
|
Panasonic Corporation
|
| MA781 MA3S781 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
SILICON EPITAXIAL PLANAR TYPE
|
PANASONIC[Panasonic Semiconductor]
|
| BAV19 BAV20 BAV21 |
SILICON EPITAXIAL PLANAR DIODES
|
SEMTECH ELECTRONICS LTD.
|
| BZT55..SERIES |
Silicon Epitaxial Planar Z-Diodes
|
Vishay
|
| BAV16WS |
Silicon Epitaxial Planar Diodes
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| BAS16 |
200 mW EPITAXIAL PLANAR DIODES
|
First Components International
|
